材料工程Issue(4)：58-62,74,6.
晶粒尺寸对氧化钒薄膜电学与光学相变特性的影响
Effects of Grain Size on Resistance and Transmittance Transition of Vanadium Oxide Thin Film
摘要
Abstract
Vanadium oxide thin films were deposited by reactive direct current facing targets magnetron sputtering, and then annealed in oxygen ambience under different temperature to fabricate phase transition vanadium dioxide thin films with different grain size. The transformation of resistance and transmittance of vanadium oxide thin films were measured across phase transition. The results show that the proportion of VO2 in film is about 40％(atom fraction) after annealed in 300℃ and 360℃, the films have insulator-metal phase transition properties. The grain size is 50nm and 100nm, respectively. After annealing at 360℃, the surface of vanadium oxide thin film becomes compact and some grain comes to merge. Electrical and optical transition properties across phase transition show that the transition temperature decreases as grain size increasing, however, the temperature width of phase transition keep constant. The temperature width of phase transition obtained from electrical transition properties is about 30℃, but that from optical transition properties is only 8℃.关键词
氧化钒薄膜/晶粒尺寸/光学相变Key words
vanadium oxide thin film/ grain size/ optical phase transition分类
化学化工引用本文复制引用
梁继然,胡明,阚强,陈涛,梁秀琴,陈弘达..晶粒尺寸对氧化钒薄膜电学与光学相变特性的影响[J].材料工程,2011,(4):58-62,74,6.基金项目
国家高技术研究发展计划(863)资助项目(2008AA031401) （863）
高等学校博士学科点专项科研基金(新教师类)资助项目(20100032120029) （新教师类）
集成光电子学国家重点实验室课题资助项目(2010KFB001) （2010KFB001）
