| 注册
首页|期刊导航|液晶与显示|TFT-LCD制造工艺中金属残留的解决方案

TFT-LCD制造工艺中金属残留的解决方案

蒋冬华 李淳东 李炳天

液晶与显示2011,Vol.26Issue(2):170-173,4.
液晶与显示2011,Vol.26Issue(2):170-173,4.DOI:10.3788/YJYXS20112602.0170

TFT-LCD制造工艺中金属残留的解决方案

Solution for Metal Remain in TFT-LCD Manufacturing Process

蒋冬华 1李淳东 1李炳天1

作者信息

  • 1. 成都京东方光电科技有限公司,四川,成都,611731
  • 折叠

摘要

Abstract

In 4-mask manufacturing process of the thin film transistor (TFT) liquid crystal display (LCD), multi-layer etch is a very critical process, because metal remain defect would happen after multi-layer etch, which will influence on the next insulator layer deposition, and induce layer broken.Conventional method for eliminating metal remain is to adjust multilayer etch process, but there is no fundamental improvement In this paper, the influence of data line etch time on metal remain after multi-layer etch has been researched, and it is found that metal remain could be fundamentally eliminated by adjusting data line etch time, and also could keep data line width in control.

关键词

四次掩模/复合层/刻蚀/信号线/金属残留

Key words

4-mask/ multi-layer/ etch/ data line/ metal remain

分类

信息技术与安全科学

引用本文复制引用

蒋冬华,李淳东,李炳天..TFT-LCD制造工艺中金属残留的解决方案[J].液晶与显示,2011,26(2):170-173,4.

液晶与显示

OA北大核心CSCDCSTPCD

1007-2780

访问量2
|
下载量0
段落导航相关论文