空军工程大学学报（自然科学版）2011，Vol.12Issue(2)：76-80,5.DOI:10.3969/j.issn.1009-3516.2011.02.016
临近空间单粒子效应的数值模型和电路模拟
Numerical and Circuit Simulations of Single Event Effects in Near Space
摘要
Abstract
Single event effect in near space is investigated via numerical model simulations and circuit simulation of inverter with feature size 0. 1 μm. The numerical simulation results show that the critical charge of microelectronics device is decreased with supply voltage and the sensitive cross section is increased with the decrease of the critical charge, which leads to an increased single event upset rate in the device in near space, however single event upset rate is also decreased with the rising of the near space height. Moreover, the single event upset is observed in the inverter with SPICE circuit simulation by the pulse injection. The obtained results are helpful to performing a deeper study of the single event effect in near space and also provide a theory guide for radiation hardened.关键词
临近空间/单粒子效应/临界电荷/电路模拟/反相器Key words
near space/ single event effect/ critical charge/ circuit simulation/ inverter分类
航空航天引用本文复制引用
蔡理,杨晓阔,杨建军,卢虎,赵晓辉..临近空间单粒子效应的数值模型和电路模拟[J].空军工程大学学报（自然科学版）,2011,12(2):76-80,5.基金项目
空军工程大学科技创新计划资助项目(KGDCXJH0912) （KGDCXJH0912）
