发光学报2011，Vol.32Issue(4)：363-367,5.DOI:10.3788/fgxb20113204.0363
利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化
Optimization of Two-step AIN Buffer of a-plane GaN Films Grown on r-plane Sapphire by MOCVD
摘要
Abstract
Nonpolar (1120) a-plane GaN films with two-step AIN buffer(a low-temperature (LT) and a high-temperature (HT) A1N layers) were grown on (1102) r-plane sapphire by metalorganic chemical vapor deposition (MOCVD). The as-grown films were investigated by high-resolutian X-ray diffraction ( XRD ) and photoluminescence (PL). The two-step AIN buffer has been proved to be advantageous in crystal quality compared with one-step LT-GaN or HT-AIN buffers in our early works. In this report, the thickness of the two-step buffer was further optimized, and much less anisotropic a-plane (GaN films were achieved. It was found that the LT-AIN layer of the two-step buffer played a key role in reduction of anisotropy of the GaN film grown.关键词
GaN/各向异性/X射线衍射/AlN/缓冲层Key words
GaN/ anisotropy/ XRD/ AlN/ buffer layer分类
数理科学引用本文复制引用
何涛,陈耀,李辉,戴隆贵,王小丽,徐培强,王文新,陈弘..利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化[J].发光学报,2011,32(4):363-367,5.基金项目
国家自然科学基金( 60890192,60877006.50872146) （ 60890192,60877006.50872146）
科技部"863"计划(2009AA033101)资助项目Project supported by the National Natural Science Foundation of China (60890192,60877006,50872146 ) （2009AA033101）
the ChineseScience and Technology Ministry ( "863",No.2009AA033101 ) （ "863",No.2009AA033101 ）
