发光学报2011，Vol.32Issue(4)：374-377,4.DOI:10.3788/fgxb20113204.0374
电极布局对硅LED性能的影响
Effect of The Electrode Layout on The Silicon LED Properties
摘要
Abstract
A leaf-shaped silicon light-emitting device is designed and fabricated with standard 0.35 μm CMOS dual gate technology. The left-shaped light-emitting device includes three wedge-shaped emitting devices, and the pn junction structure is n weli/p + junction. The device's photograph is measured using the Olympus IC microscope, and the electrical properties of devices were tested. The device operates in avalanche breakdown, and the threshold voltage is 8.8 V, which can emit yellow and visible light. Under forward bias condition, the turn-on voltage of the device is 0.8 V. Comparing with the wedge device, the leaf-shaped device is affected by the series resistance divider, and appears an enhanced luminescence on the tip. After analyzing the results, it is obtained that they are related to the layout of electrode.关键词
硅LED/CMOS工艺/电极版图Key words
silicon LED/ standard CMOS technology/ layout of electrode分类
信息技术与安全科学引用本文复制引用
杨广华,李晓云..电极布局对硅LED性能的影响[J].发光学报,2011,32(4):374-377,4.基金项目
国家自然科学基金(60706015)资助项目 （60706015）
