现代电子技术2011，Vol.34Issue(10)：196-198,3.
一种S波段宽带GaN放大器的设计
Design of Wide-band GaN Power Amplifier Working in S Band
张永慧 1吕春明 1汪邦金1
作者信息
- 1. 中国电子科技集团第38研究所微波部,安徽合肥230088
- 折叠
摘要
Abstract
GaN is considered to be a perfect candidate for high-frequency semiconductor power devices due to its features such as wide bandgap and high critical electricfield. A S-band GaN wide-band power amplifier was designed and fabricated based on the Agilent ADS software to investigate the properties of GaN power amplifier. The power amplifier was tested. The test results show that the output power is more than 44dBm, and prove that the GaN wide-band power device has characteristic of wide-band.关键词
GaN/平坦度/仿真设计/宽禁带/半导体/功率放大器Key words
GaN/ flatness/ simulation desing/ wide-bandgap/ semiconductor/ power amplifier分类
信息技术与安全科学引用本文复制引用
张永慧,吕春明,汪邦金..一种S波段宽带GaN放大器的设计[J].现代电子技术,2011,34(10):196-198,3.
