现代电子技术2011，Vol.34Issue(10)：208-210,3.
GaN基量子阱红外探测器的设计
Design of GaN-based Quantum Well Infrared Detector
孙鲁 1赵慧元 1苏秉华1
作者信息
- 1. 北京理工大学珠海学院,广东珠海,519085
- 折叠
摘要
Abstract
To realize GaN-based quantum well infrared photodetector, the energy band structures of GaN-based multi-quantum well structures are researched using self-consistent Schro dinger-Poisson equations. Considering the spontaneous and piezoelectric polarization in GaN-based materials, polarization-matched GaN-based quantum well infrared photodectors are designed by utilizing the compensation effect between the spontaneous and piezoelectric polarization. It is very important to fabricate the devices in the next step.关键词
GaN/量子阱/红外探测器/极化匹配Key words
GaN/ quantum well/ infrared detector/ polarization match分类
信息技术与安全科学引用本文复制引用
孙鲁,赵慧元,苏秉华..GaN基量子阱红外探测器的设计[J].现代电子技术,2011,34(10):208-210,3.
