强激光与粒子束2011，Vol.23Issue(3)：811-816,6.DOI:10.3788/HPLPB20112303.0811
静态单粒子翻转截面的获取及分类
Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs
摘要
Abstract
In order to evaluate single event upsets(SEUs) in SRAM-based FPGAs and to find the sensitive resource in configuration memory, a heavy ions irradiation experiment was carried out on a Xilinx FPGAs device XCV300PQ240.The experiment was conducted to gain the static SEU cross section and classify the SEUs in configurations memory according to different resource uses.The results demonstrate that the inter-memory of SRAM-based FPGAs is extremely sensitive to heavy-ion-induced SEUs.The LUT and routing resources are the main source of SEUs in the configuration memory, which covers more than 97.45％ of the total upsets.The SEU sensitivity of various resources is different.The IOB control bit and LUT elements are more sensitive, and more attention should be paid to the LUT elements in radiation hardening, which account for a quite large proportion of the configuration memory.关键词
FPGA/辐照效应/单粒子效应/单粒子翻转Key words
FPGA/ irradiation effects/ single event effects/ single event upset分类
信息技术与安全科学引用本文复制引用
姚志斌,范如玉,郭红霞,王忠明,何宝平,张凤祁,张科营..静态单粒子翻转截面的获取及分类[J].强激光与粒子束,2011,23(3):811-816,6.基金项目
国防科技预研基金项目 （）
