量子电子学报2011，Vol.28Issue(2)：247-252,6.DOI:10.3969/j.issn.1007-5461.2011.02.021
溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究
Characterization of Mo-doped ZnO thin films prepared by sol-gel method
摘要
Abstract
Mo-doped ZnO (MZO) films with different Mo concentration (0～1 at％) were prepared on Al2O3 (0001) substrates by sol-gel spin coating route. It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreases with the increase of Mo content and then gradually increases with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at％. The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (＞85％) in near-infrared region (800～2000 nm) indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.关键词
材料/光电特性/溶胶凝胶法/钼掺杂氧化锌/透明导电氧化物Key words
materials/ photoelectric properties/ sol-gel spin coating method/ Mo-doped zinc oxide/ transparent conducting oxides分类
数理科学引用本文复制引用
邵景珍,董伟伟,陶汝华,邓赞红,周曙,方晓东..溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究[J].量子电子学报,2011,28(2):247-252,6.基金项目
Anhui Provincial Natural Science Foundation (090414169),Anhui Provincial International Science and Technology Cooperation Program (10080703021) （090414169）
