四川大学学报（自然科学版）2011，Vol.48Issue(2)：356-360,5.DOI:10.3969/j.issn.0490-6756.2011.02.020
利用电子束蒸发制备高K介质TiO2薄膜
Preparation of high-k gate dielectric film TiO2 thin film via electron electron beam evaporation
摘要
Abstract
TiO2 films were fabricated by electron beam evaporation with different substrate temperatures and evaporation beams, and the refractive index and thickness were measured by ellipsometry.The capacitor properties were characterized by high frequency capacitance-voltage.The results show the substrate temperature and evaporation beam taking the important effect on the capacitor properties.The composition was characterized by XPS and FI--IR, and it is found that the TiO2 film contains substoichiometric TiOx(r＜2) and SiOy(y＜2) in the TiO2-Si interface.关键词
TiO2薄膜/高频CV曲线/电子束蒸发Key words
TiO2 film/ high frequency C- V/ electron beam evaporation分类
数理科学引用本文复制引用
刘成士,伍登学,赵利利,廖志君..利用电子束蒸发制备高K介质TiO2薄膜[J].四川大学学报（自然科学版）,2011,48(2):356-360,5.基金项目
国家自然科学基金委员会"重点学术期刊专项基金"(50131010) （50131010）
总装预研基金(JG2006047) （JG2006047）
