物理学报2011，Vol.60Issue(1)：429-434,6.
X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究
The study of defects in Ga0.946 Mn0.054 As by X-ray absorption spectra
摘要
Abstract
The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (Mn1) in the Ga0.946Mn0.054 As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0. 054As grown at lower temperature ( Ts = 200℃ ) is mainly AsGa, but at Ts ＞ 230℃ Mn1 is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove Mn1 out of the Ga0.946 Mn0.054As lattice, and the highest Curie temperature (Tc = 130 K) is reached. Moreover, it is indicated that the LTannealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving Mn1 defects to fill up the holes left by AsGa.关键词
Ga0.946Mn0.054As稀磁半导体/X射线吸收谱/As反位缺陷/Mn间隙原子Key words
Ga0.946Mn0.054As diluted magnetic semiconductor/ X-ray absorption spectra/ As antisites/ Mn interstitials引用本文复制引用
乔媛媛,肖正国,曹先存,郭浩民,史同飞,王玉琦..X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究[J].物理学报,2011,60(1):429-434,6.基金项目
中科院知识创新工程青年人才领域前沿项目基金(084N541121)资助的课题. （084N541121）
