物理学报2011，Vol.60Issue(1)：563-567,5.
应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型
Model of electron mobility in inversion layer of strained Si/Si1-x Gexn type metal-oxide-semiconductor field-effect transistors
摘要
Abstract
In order to describe the electron mobility enhancement in inversion layer in strained-Si on Si1-x Gex n type metaloxide-semiconductor field-effect transistors (nMOSFETs), a new physically-based electron mobility model is presented in the paper. This model can not only show the dependence of acoustic phonon-limited mobility and surface roughness-limited mobility on transverse electrical field normal to the semiconductor-insulator interface, but also explains the electron mobility enhancement mechanism due to scattering suppression caused by germanium (Ge) content. The expression of the new model is simple and can simulate the mobility for any Ge content. Numerical analysis results show that this model fits the reported experimental data very well. In addition, this model can be easily included in the device simulator ISE and gives good agreement with simulated results of device simulator with built-in model.关键词
应变Si/SiGe/电子迁移率/反型层/模型Key words
strained-Si/SiGe/ electron mobility/ inversion layer/ model引用本文复制引用
李斌,刘红侠,袁博,李劲,卢凤铭..应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型[J].物理学报,2011,60(1):563-567,5.基金项目
国家自然科学基金(批准号:60976068,60936005),教育部科技创新工程重大项目培育基金(批准号:708083)和中央高校基本科研业务费专项基金(批准号:200807010010)资助的课题. （批准号:60976068,60936005）
