物理学报2011，Vol.60Issue(1)：584-589,6.
场板抑制GaN高电子迁移率晶体管电流崩塌的机理研究
Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors
摘要
Abstract
The physical mechanisms underlying current collapse effects in the passivated GaN high-electron mobility transistors ( HEMTs), the gate field-plated GaN HEMTs and the gate-source field-plated GaN HEMTs are investigated in experiments and numerical device simulations. And the intrinsic relationships of the current collapse with the carrier concentration, the probability of traps ionization, and the electric field within the cap layer are established. Results show that the direction of the longitudinal electric field, as well as the intensity distribution of both the transverse and longitudinal electric fields within the cap layer, can be modulated effectively by the field-plates. The electric field intensity near the gate is reduced and that beneath the field-plates increased. Due to the effects of the field-plates on electric field, the transverse movement of electrons near the gate is reduced, and the longitudinal electron movement beneath the field-plates is increased. These affects the electron concentration distribution and the ionization probability of the traps in the cap layer, which makes field-plates effective for the reduction in the current collapse.关键词
电流崩塌/钝化器件/场板器件/陷阱电离率Key words
current collapse/ passivated devices/ field-plated devices/ probability of traps ionization引用本文复制引用
毛维,许晟瑞,毕志伟,周洲,杨凌,王昊,杨翠,郝跃,张进成,刘红侠,马晓华,王冲,张金风,杨林安..场板抑制GaN高电子迁移率晶体管电流崩塌的机理研究[J].物理学报,2011,60(1):584-589,6.基金项目
中央高校基本科研业务费专项资金(批准号:JY10000925002),国家自然科学基金(批准号:60976068,60936005)和国家科技重大专项(批准号:2008ZX01002-002)资助的课题. （批准号:JY10000925002）
