光学精密工程2011，Vol.19Issue(2)：452-456,5.DOI:10.3788/OPE.20111902.0452
808nm千瓦级高效大功率半导体激光光源
808 nm kW-output high-efficiency diode laser sources
摘要
Abstract
A kind of beam shaping technique was presented to improve the beam quality of a semiconductor laser and to achieve the beam splitting, translating, and rearranging by a parallel plate glass stack. The experiment uses a 20-layer 808 nm semiconductor laser array designed by ourselves with the output power of 60 W per bar, 19 light-emitting points of 1 μm× 135 μm each and 30％ filling factor to expand beam at a slow axis through a telescope system,and also uses a focusing lens to focus on both the slow axis and the fast one at the same time. Experiments show that the technique can achieve the 1 kW output power on the focal plane, focused spot of 1 mm × 1 mm and coupling efficiency of 90 ％,which basically satisfies the needs of laser cladding and welding.关键词
高功率激光器/半导体激光器/光束整形Key words
high power laser/semiconductor laser/ beam shaping分类
信息技术与安全科学引用本文复制引用
单肖楠,刘云,曹军胜..808nm千瓦级高效大功率半导体激光光源[J].光学精密工程,2011,19(2):452-456,5.基金项目
吉林省科技厅省长基金资助项日(No.20075001) （No.20075001）
