现代电子技术2011，Vol.34Issue(6)：163-165,3.
一种新型的电流模式曲率补偿带隙基准源
New Current-mode Curvature-compensated CMOS Bandgap
摘要
Abstract
A new sub-1V curvature-compensated CMOS bandgap reference (BGR) circuit is presented. Different from the conventional bandgap reference, a third current is introduced to eliminate the temperature nonlinearity of VEB of parasitic p-n-p bipolar junction transistor in CMOS process. The proposed circuit was designed and simulated in a standard 0. 18um CMOS process. The results show that the output reference voltage at 623 mV has a temperature coefficient of 4. 2 ppm/％ from -55 ％ to ＋125 ％ , and a line regulation of 0. 9 mV/V at 1～2. 1 V is achieved.关键词
带隙基准源/曲率补偿/低压/温度系数分类
信息技术与安全科学引用本文复制引用
任若冰,王亚军,陶健,武晓伟,孙天锡..一种新型的电流模式曲率补偿带隙基准源[J].现代电子技术,2011,34(6):163-165,3.基金项目
福建省重点科技项目资助(2006H0092) （2006H0092）
