无机材料学报2011，Vol.26Issue(4)：403-410,8.DOI:10.3724/SP.J.1077.2011.00403
Co-Se化合物薄膜的电沉积制备与表征
Preparation and Characterization of Co-Se Thin Films by Electrodeposition
摘要
Abstract
Cobalt selenide thin films were prepared onto tin oxide-coated glass substrates by electrodeposition method.The electrochemical mechanisms for this thin film formation were investigated by cyclic voltammetry (CV), and the results show that cobalt selenide compound phases are formed via either surface induced reduction by predeposited selenium or directly reaction with H2Se from six electron reduction of H2SeO3.It is also found that films' stoichiometry and morphology are significantly influenced by deposition potential, deposition temperature and pH value.Se-rich CoSe thin films with hexagonal crystal structure and compact morphology can be obtained at deposition potential of -0.5V (vs SCE), deposition temperature of 50℃ and pH value of 2.0.The electrodeposited CoSe film shows an optical absorption coefficient of higher than 1 × 105 cm-1, and an optical band gap of (1.53±0.01) eV which is close to the theoretical optimization value of the light absorption layer materials in single-junction solar cell.关键词
CoSe薄膜/循环伏安/欠电位沉积/带隙宽度/太阳电池Key words
CoSe thin films/ cyclic voltammetry/ under potential deposition/ band gap/ solar cells分类
信息技术与安全科学引用本文复制引用
王博,刘芳洋,李劼,赖延清,张治安,刘业翔..Co-Se化合物薄膜的电沉积制备与表征[J].无机材料学报,2011,26(4):403-410,8.基金项目
湖南省自然科学基金重点项目(09JJ3110) （09JJ3110）
