半导体学报2011，Vol.32Issue(4)：1-9,9.DOI:10.1088/1674-4926/32/4/041001
MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity*
MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity*
摘要
Abstract
The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is derived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionizafion are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and majority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.关键词
MOS capacitance/ trapping capacitance/ impurity deionizafion/ spintronicsKey words
MOS capacitance/ trapping capacitance/ impurity deionizafion/ spintronics引用本文复制引用
Jie Binbin,Sah Chihtang..MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity*[J].半导体学报,2011,32(4):1-9,9.基金项目
This investigation has been supported by the CTSAH Associates (CTSA),founded by the late Linda Su-Nan Chang Sah and also supported,starting recently,by the Xiamen University,China. （CTSA）
