半导体学报2011，Vol.32Issue(4)：31-34,4.DOI:10.1088/1674-4926/32/4/043002
Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*
Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*
摘要
Abstract
Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance,optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm, sheet resistance of 6.8 Ω/□ and an average transmittance of 91.3％ in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.关键词
tungsten-doped zinc oxide/ transparent conducting films/ magnetron sputtering/ deposition pressureKey words
tungsten-doped zinc oxide/ transparent conducting films/ magnetron sputtering/ deposition pressure引用本文复制引用
Zhang Huafu,Yang Shugang,Liu Hanfa,Yuan Changkun..Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*[J].半导体学报,2011,32(4):31-34,4.基金项目
Project supported by the Natural Science Foundation of Shandong Province,China (No.ZR2009GQ011) （No.ZR2009GQ011）
