半导体学报2011，Vol.32Issue(4)：155-160,6.DOI:10.1088/1674-4926/32/4/045011
A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference*
A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference*
摘要
Abstract
A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 0.35-μm 3.3-V/5-V dual gate mixed-signal CMOS process The proposed circuit generates a precise sub-bandgap voltage of l V. The temperature coefficient of the output voltage is 13.4 ppm/℃ with the temperature varying from-20 to 80 ℃ The proposed circuit operates properly with the supply voltage down to 1.3 V, and consumes 150 nA at room temperature. The line regulation is 0.27％/V The power supply rejection ratio at 100 Hz and l MHz is -39 dB and 51 dB, respectively. The chip area is 0.2 mm2.关键词
nanopower/ sub-bandgap/ switched-capacitor/ voltage referenceKey words
nanopower/ sub-bandgap/ switched-capacitor/ voltage reference引用本文复制引用
Yan Wei,Li Wenhong,Liu Ran..A 150-nA 13.4-ppm/℃ switched-capacitor CMOS sub-bandgap voltage reference*[J].半导体学报,2011,32(4):155-160,6.基金项目
Project supported by the National High Technology Research and Development Program of China (No.2009AA011607). （No.2009AA011607）
