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ICP dry etching ITO to improve the performance of GaN-based LEDsOACSCDCSTPCDEI

ICP dry etching ITO to improve the performance of GaN-based LEDs

英文摘要

In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs),the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area.An optimized sim…查看全部>>

Meng Lili;Chen Yixin;Ma Li;Liu Zike;Shen Guangdi

ITO lateral corrosion dry etching light extraction efficiency

ITO lateral corrosion dry etching light extraction efficiency

《半导体学报》 2011 (1)

65-68,4

10.1088/1674-4926/32/1/014010

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