发光学报2011，Vol.32Issue(3)：245-250,6.DOI:10.3788/fgxb20113203.0245
(Li,Cu)掺杂ZnO薄膜的发光性质
Luminescence Properties of (Li, Cu)-doped ZnO Thin Films
摘要
Abstract
(Li, Cu)-doped ZnO thin films were prepared on the n-type Si (100) substrate by means of solgel process. The structure, surface morphology and photoluminescence properties of the ZnO films were investigated. The results show that all of ZnO thin film samples have strong c-axis preferred orientation. The visible luminescence intensity of Li-doped ZnO films increases with the dopant concentration. The visible light emission can be attributed to the incorporation of transitions derived from the singly ionized oxygen vacancy to the top of valence band and Lizn acceptor states. Similarly, the yellow-green emission might be due to the incorporation of transitions derived from the singly ionized oxygen vacancy to the top of valence band and Cuzn acceptor states. With the increase of Cu dopant concentration, the transition of singly ionized oxygen vacancy to Cuzn acceptor states plays a dominative role.关键词
ZnO薄膜/(Li,Cu)掺杂/光致发光Key words
ZnO thin films/ (Li,Cu) doping/ photolumineseence分类
数理科学引用本文复制引用
陈宝,孟祥东,施志明,曾祥华,陈小兵..(Li,Cu)掺杂ZnO薄膜的发光性质[J].发光学报,2011,32(3):245-250,6.基金项目
扬州大学创新培育基金(2007CXJ002,2009CXJ002,2010CXJ004)资助项目 （2007CXJ002,2009CXJ002,2010CXJ004）
