发光学报2011，Vol.32Issue(3)：266-271,6.DOI:10.3788/fgxb20113203.0266
极化效应对InGaN/GaN多量子阱结构光电特性的影响
Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well
摘要
Abstract
The band structure and spontaneous emission spectra of the InGaN/GaN multiple quantum well (MQW) structures considering the polarization effect were systematically analyzed employing a newly developed theoretical model based on the k · p theory. Numerical results show that the square potential profile of conduction band and valence band change to triangle due to the polarization effect. And polarization-induced electrostatic field makes the bandgap of InGaN/GaN MQW structure narrow, which results in the red shift of peak emission wavelength. In addition, the emission efficiency of InGaN/GaN MQW structure reduces because the polarization effect separates the distribution of electrons and holes. Furthermore, the red shift of the peak emission wavelength induced by the polarization effect is enhanced under the condition of more In content in well layers or deeper well width for the InGaN/GaN MQW structures.关键词
InGaN/GaN/极化效应/多量子阱/自发辐射谱Key words
InGaN/GaN/ polarization effect/ multiple quantum well/ spontaneous emission spectra分类
数理科学引用本文复制引用
路慧敏,陈根祥..极化效应对InGaN/GaN多量子阱结构光电特性的影响[J].发光学报,2011,32(3):266-271,6.基金项目
国家自然科学基金(60777013) （60777013）
北京市自然科学基金(4082023) （4082023）
北京交通大学优秀博士生科技创新基金(141063522)资助项目 （141063522）
