材料科学与工程学报2011，Vol.29Issue(2)：221-226,6.
直接氮化法制备氮化铝纳米线
Synthesis of AlN Nanowires Via a Direct Nitridation Method
摘要
Abstract
AlN nanowires were synthesized by direct nitridation with Al-NH4Cl as starting mixture. The nitridation experiments were carried out in a horizontal tube furnace and in a N2 and H2 mixture gas flow (10 vol％ H2). The AlN nanowires were investigated using X-ray diffractometry (XRD), scan electron microscopy (SEM), high resolution transmission electron microscopy (HREM). The effects of temperature, temperature rising rate and ratio of Al-NH4Cl (wt％) on the types and morphologies of the products and the yields of the AlN nanowires were studied. The results indicate that the synthesized AlN nanowire has hexagonal single crystal structure covered with a thin amorphous layer and the growth of the AlN nanowires is based on a vaporsolid (VS) mechanism. The optimized synthesis factors of the AlN nanowires have been obtained and the effects of the above factors on the growth of the AlN nanowires are primarily analyzed using the VS growth mechanism and the concept of the vapor supersaturation degree.关键词
氮化铝纳米线/铝粉/氯化铵/直接氮化Key words
AlN nanowires/ Al powder/ NH4Cl/ direct nitridation分类
通用工业技术引用本文复制引用
王稳稳,程仁志,胡晓阳,张迎九,宋平新,田永涛,李新建..直接氮化法制备氮化铝纳米线[J].材料科学与工程学报,2011,29(2):221-226,6.基金项目
河南省基础与前沿技术研究计划资助项目(092300410136) （092300410136）
教育部留学回国人员科研启动基金及河南省重大科技攻关资助项目(082101510007) （082101510007）
