物理化学学报2011，Vol.27Issue(5)：1249-1253,5.
化学气相沉积法制备Sn2S3一维纳米结构阵列
Preparation of Sn2S3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition
摘要
Abstract
We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD).Scanning electron microscopy (SEM) showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns.X-ray diffraction (XRD) results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002]direction.Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV.The growth of Sn2S3 nanowires is governed by the vapor-solid (V-S) growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.关键词
一维纳米结构/阵列/化学气相沉积法/三硫化二锡/气-固生长机理Key words
One-dimensional nanostructure/ Array/ Chemical vapor deposition/ Sn2S3/ Vapor-solid growth mechanism分类
化学化工引用本文复制引用
彭跃华,周海青,刘湘衡,何熊武,赵丁,海阔,周伟昌,袁华军,唐东升..化学气相沉积法制备Sn2S3一维纳米结构阵列[J].物理化学学报,2011,27(5):1249-1253,5.基金项目
教育部新世纪优秀人才支持计划(NCET-07-0278)、湖南省杰出青年基金(08JJ1001)、湖南省自然科学基金(07JJ6009)和湖南师范大学青年优秀人才培养计划(070623)资助 （NCET-07-0278）
