物理学报2011，Vol.60Issue(4)：406-411,6.
低能Cl原子刻蚀Si(100)表面的分子动力学模拟
Molecular dynamics simulations of low-energy Cl atoms etching Si(100) surface
摘要
Abstract
In this study, molecular dynamics simulation method is used to investigate the interactions of Cl continuously bombarding a crystalline Si (100) surface in an incident energy range of 0.3-10 eV.The surface temperature is set to be 300 K for all the incident energies.The improved Tersoff-Brenner type potential is employed.The simulation results show that a Cl-rich reaction layer is formed on the surface due to Cl continuously bombarding.The SiCl group is the predominant species in the reaction layer.The thickness of the reaction layer increases with incident energy.The etching ratio increases with incident energy increasing.The main etching product is SiCl4 when the incident energies are 0.3, 1 and 5 eV, but it is SiClx(x ＜4) when the incident enery is 10 eV.With the incident energy increasing, the main etching mechanism changes from chemical etching to physical etching.关键词
分子动力学/Cl刻蚀Si/分子动力学模拟/微电子机械系统Key words
molecular dynamics/ Cl etching Si/ molecular dynamics simulation/ MEMS引用本文复制引用
贺平逆,宁建平,秦尤敏,赵成利,苟富均..低能Cl原子刻蚀Si(100)表面的分子动力学模拟[J].物理学报,2011,60(4):406-411,6.基金项目
贵州省优秀青年科技人才培养计划(批准号:700968101)和国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006)资助的课题. （批准号:700968101）
