物理学报2011，Vol.60Issue(4)：609-615,7.
光电耦合器电离辐射损伤电流传输比1/f噪声表征
Noise as a characteriscic for current transmitting rate of optoelectronic coupled devices for ionization radiation damage
林丽艳 1杜磊 1包军林 2何亮1
作者信息
- 1. 西安电子科技大学技术物理学院,西安,710071
- 2. 西安电子科技大学微电子学院,西安,710071
- 折叠
摘要
Abstract
Based on the mechanism of ionization radiation damage in optoelectronic coupled devices (0CDs), the characteristic models of current transmitting rate (CTR) and 1/f noise are established. The results show that CTR degradation and noise increase are due to the increase of SiO2/Si interface defects at the collector junction and emit junction in phototransistor.The relationship between CTR degradation and noise change is established by the radiation dose. The correctnesses of characteristic models are validated in experiment. By the relationship between noise change and radiation dose, the highdose radiation degradation can be predicted through the low-dose irradiation experiment. So noise can be used to evaluate the radiation tolerance of OCDs.关键词
1/f噪声/光电耦合器/缺陷/模型Key words
l/f noise/ OCDs/ defect/ model引用本文复制引用
林丽艳,杜磊,包军林,何亮..光电耦合器电离辐射损伤电流传输比1/f噪声表征[J].物理学报,2011,60(4):609-615,7.
