表面技术2011，Vol.40Issue(2)：83-85,3.
真空蒸镀多晶硅薄膜工艺对其组织和性能的影响
Effect of Process of Polycrystalline Silicon Thin Films Prepared by Vacuum Evaporation on Organization and Performance
曹健 1王宙 1室谷贵之(日) 1付传起1
作者信息
- 1. 大连大学,表面工程中心,大连,116622
- 折叠
摘要
Abstract
Polycrystalline silicon thin films were prepared by vacuum evaporation and annealing. The samples after annealing were characterized by TEM. The morphology of the films was observed by AFM. And the pressure-resisting performance was tested. The influence of substrate temperature,substrate distance and annealing process on poly-Si thin film was discussed. Results indicate that thin films obtained by vacuum evaporation are amorphous and can be crystallized by annealing into those of 0.5μm grain size ; Optimum conditions are substrate temperature of 120 ℃ and substrate distance of 60 mm. The pressure-resisting value can reach 384.2 V.关键词
真空蒸镀/退火/多晶硅薄膜Key words
vacuum evaporation/ annealing/ polycrystalline silicon thin film分类
矿业与冶金引用本文复制引用
曹健,王宙,室谷贵之(日),付传起..真空蒸镀多晶硅薄膜工艺对其组织和性能的影响[J].表面技术,2011,40(2):83-85,3.
