四川师范大学学报（自然科学版）2011，Vol.34Issue(3)：376-380,5.DOI:10.3969/j.issn.1001-8395.2011.03.020
CdTe薄膜的射频磁控溅射制备及表征
Preparation and Characterization of RF Magntron Sputtering CdTe Thin Film
摘要
Abstract
The cadmium telluride thin film was deposited on glass substrate at room teperature by RF magnetron sputtering. The film was characterized to show the variation of its properties with the diverse deposition conditions by X-ray diffraction, UV-VIS spectrometer, scanning electrical microscope, etc. The result indicates that thc deposition speed increases with the increase of deposition power and decreases with the increase of pressure. As the pressure decreases, the CdTe film' s crystallinity gets worse. It is found that the cubic crystalline structure of deposited sample changes to the crystalline hexagonal CdTe phase as the power increased from 100 W to140 W. While the CdTe thin films is deposited under the pressure of 0.3 Pa, with the power of 100 W and at room temperature, the crystallinity is the best and the band gap is 1.45 eV.关键词
射频磁控溅射/CdTe/禁带宽度Key words
RF magnetron sputtering/ cadmium telluride/ band gap分类
数理科学引用本文复制引用
王波,张静全,王生浩,冯良桓,雷智,武莉莉,李卫,黎兵,曾广根..CdTe薄膜的射频磁控溅射制备及表征[J].四川师范大学学报（自然科学版）,2011,34(3):376-380,5.基金项目
国家高技术研究发展计划(2006AA05Z418)资助项目 （2006AA05Z418）
