物理学报2011，Vol.60Issue(3)：598-603,6.
Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究
Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface
杨景景 1杜文汉2
作者信息
- 1. 常州工学院物理实验中心,常州213002
- 2. 中国科学技术大学微尺度物质科学国家实验室,合肥230026
- 折叠
摘要
Abstract
For the investigation of the interface stability of SrTiO3/Sr/Si (100) system during high temperature annealing process, we have grown 1-2 atom layer SrTiO3 ultra-thin film on Sr/Si( 100 ) -2 × 1 substrate using pulsed laser deposition technique. After annealing, we found that nano-scale islands appear in the surface. These nano-islands show metallic property by scanning tunneling microscopy, and the STM image shows bias voltage dependence of these nano-islands.Oxygen in the oxide reacts with silicon and forms volatile silicon monoxide during vacuum annealing, while Ti atoms in the oxide react with silicon, forming C -54 TiSi2 islands.关键词
TiSi2纳米岛/Sr/Si(100)表面/扫描隧道显微镜Key words
TiSi2 nano-island/ Sr/Si(100) surface/ scanning tunnelling microscope引用本文复制引用
杨景景,杜文汉..Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究[J].物理学报,2011,60(3):598-603,6.
