物理学报2011，Vol.60Issue(3)：626-629,4.
氧化锌锡薄膜晶体管的研究
Study of zinc tin oxide thin-film transistor
摘要
Abstract
Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9. 1 cm2/V, s, threshold voltage of -2 V, and current on/off ratio of 104.关键词
氧化锌锡/薄膜晶体管/场效应迁移率Key words
zinc tin oxide/ thin-film transistors/ field effect mobility引用本文复制引用
王雄,才玺坤,原子健,朱夏明,邱东江,吴惠桢..氧化锌锡薄膜晶体管的研究[J].物理学报,2011,60(3):626-629,4.基金项目
国家自然科学基金(批准号:10974174),国家重点基础研究发展计划项目(批准号:2011CB925603),浙江省自然科学基金(批准号:Z6100117,Y4080171)资助的课题. （批准号:10974174）
