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负电子亲和势GaN光电阴极的研究进展

付小倩 常本康 李飙 王晓晖 乔建良

物理学报2011,Vol.60Issue(3):823-829,7.
物理学报2011,Vol.60Issue(3):823-829,7.

负电子亲和势GaN光电阴极的研究进展

Progress of negative electron affinity GaN photocathode

付小倩 1常本康 2李飙 1王晓晖 1乔建良1

作者信息

  • 1. 南京理工大学电子工程与光电技术学院,南京210094
  • 2. 济南大学信息科学与工程学院,济南250022
  • 折叠

摘要

Abstract

GaN is becoming a promising material in ultraviolet detection and vacuum electronic source field for its good performance. High quantum efficiencies of greater than 70% and 30% have been achieved for the opaque mode and transparent mode GaN photocathode, respectively. This paper reviews the progress of GaN photocahtode in three important fields, including structure design, surface cleaning and Cs/O activation, analyzes the key factors influencing the quantum efficiency, and evaluates the prospect for its development.

关键词

GaN光电阴极/负电子亲和势/量子效率/进展

Key words

GaN photocathode/ negative electron affinity/ quantum efficiency/ progress

引用本文复制引用

付小倩,常本康,李飙,王晓晖,乔建良..负电子亲和势GaN光电阴极的研究进展[J].物理学报,2011,60(3):823-829,7.

基金项目

国家自然科学基金(批准号:60871012)资助的课题. (批准号:60871012)

物理学报

OA北大核心CSCDCSTPCD

1000-3290

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