红外技术2011，Vol.33Issue(5)：296-300,308,6.
铁电厚膜焦平面探测器微桥湿法刻蚀工艺研究
Research on Wet Etching of Microbridge for Ferroelectric Thick Film Focal Plane Detector
摘要
Abstract
In order to prepare high-performance ferroelectric thick film infrared detector, the mechanism of silicon anisotropic etching properties were discussed and (100) silicon wet anisotropic etching technology was researched.The impacts of Molar ratio of KOH and the etching temperature on the Si substrate corrosion properties were explored.For KOH etching solution mixed with the IPA in the corrosion system,the hydrogen bubbles could be quickly separated from the silicon surface, thus improving the surface morphology of silicon.The results indicated that, the corrosion rate of Si (100) surface increase with the rise of etching solution concentration and temperature, smooth etching surface could be obtained with the mass fractions of 34％ KOH and 11％ IPA, at 80℃ for 1.5 h, and therefore good quality micro-bridge structure could be prepared.关键词
非制冷红外焦平面阵列/微桥/光刻/各向异性腐蚀/腐蚀装置Key words
uncooled infrared focal plane arrays/ micro-bridge/ Photo-lithergraphy/ anisotropic etching/etching equipments分类
信息技术与安全科学引用本文复制引用
范茂彦,姜胜林,张丽芳..铁电厚膜焦平面探测器微桥湿法刻蚀工艺研究[J].红外技术,2011,33(5):296-300,308,6.基金项目
国家自然科学基金委员会基金资助项目(60777043) （60777043）
国家"八六三"基金资助项目(2007AA03Z120) （2007AA03Z120）
