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高性能SRAM的设计与实现

吴耀辉 胡涣章 梁丰 蔡宇

计算机应用与软件2011,Vol.28Issue(6):239-241,3.
计算机应用与软件2011,Vol.28Issue(6):239-241,3.

高性能SRAM的设计与实现

DESIGN AND IMPLEMENTATION OF HIGH PERFORMANCE SRAM

吴耀辉 1胡涣章 1梁丰 1蔡宇2

作者信息

  • 1. 浙江万里学院电子信息学院,浙江宁波,315100
  • 2. 朗讯科技(中国)有限公司,北京,100738
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摘要

Abstract

In this paper a 64KB SRAM is designed and implemented for the purpose of shorter delay and lower energy consumption. To speed up the decoder the conventional static CMOS gates are modified into SCL and pre-charged gates. Encoding the ECC with 64:72 reduces the circuit size and cell numbers. The capacitance replica is used to generate sense amplifier enabling signals to improve system flexibility.The transistor is used for emulation. Compared to mainstream designs, the SRAM designed in this paper owns an improved delay of 653.7ps and a lower energy consumption of 11.3mw.

关键词

SRAM/Block/ECC/灵敏放大器

Key words

SRAM/ Block/ ECC/ Sense amplifier

引用本文复制引用

吴耀辉,胡涣章,梁丰,蔡宇..高性能SRAM的设计与实现[J].计算机应用与软件,2011,28(6):239-241,3.

基金项目

宁波市自然科学基金项目(2006A610009). (2006A610009)

计算机应用与软件

OA北大核心CSCDCSTPCD

1000-386X

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