红外与毫米波学报2011，Vol.30Issue(3)：260-262,267,4.
钝化界面植氢优化的碲镉汞中波红外探测芯片
HgCdTe mid-wavelength infrared detector with interface passivated by hydrogen implantation
摘要
Abstract
The results of n + -on-p HgCdTe mid-wavelength infrared detector with a passivation interface is presented.The interface passivation process was optimized using high-density hydrogen plasma implantation.By implantation barrier layer deposition, ion-implantation window exposure, B + implantation, passivation film deposition, plasma hydrogen-implantation, metallization and indium-bump arrays fabrication, n + -on-p HgCdTe mid-wavelength infrared detector was obtained from a Hg1-xCdxTe film grown by MBE.Cut-in voltages of HgCdTe mid-wavelength detector Photodiodes with interface optimized were 50mV approximately larger than those of the one without optimization.The dynamic resistances at zero bias and reverse bias region were improved 10 times and dynamic resistances at the larger forward region were decreased significantly.Thus, it is obvious that plasma hydrogen-implantation is beneficial to suppress the dark currents and improve the ohmic contact of HgCdTe mid-wavelength infrared detector photodiodes, and then to enhance the operating dynamic range and performance uniformity.关键词
HgCdTe/钝化界面/等离子体植氢/暗电流Key words
HgCdTe/ passivation interface/ plasma-hydrogen-implantation/ dark current分类
信息技术与安全科学引用本文复制引用
叶振华,丁瑞军,何力,黄建,尹文婷,冯婧文,陈洪雷,陈路,廖清君,林春,胡晓宁..钝化界面植氢优化的碲镉汞中波红外探测芯片[J].红外与毫米波学报,2011,30(3):260-262,267,4.基金项目
国防科技创新基金(cxjj-10-m29,9140A02021909zk0703) （cxjj-10-m29,9140A02021909zk0703）
