半导体学报2011，Vol.32Issue(5)：22-27,6.DOI:10.1088/1674-4926/32/5/053003
Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition
Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition
摘要
关键词
GaAs nanowire/p-type doping/metal organic chemical vapor position/zinc-blende structureKey words
GaAs nanowire/p-type doping/metal organic chemical vapor position/zinc-blende structure引用本文复制引用
Li Ran,Huang Hui,Ren Xiaomin,Guo Jingwei,Liu Xiaolong,Huang Yongqing,Cai Shiwei..Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition[J].半导体学报,2011,32(5):22-27,6.基金项目
Project supported by the National Basic Research Program of China (No.2010CB327601),the Key International Cooperation Research Project of the National Natural Science Foundation of China (No.90201035),the Chinese Universities Scientific Fund (No.BUPT2009RC0410),the National Natural Science Foundation of China (No.61077049),and the 111 Program of China (No.B07005). （No.2010CB327601）
