半导体学报2011，Vol.32Issue(5)：36-41,6.DOI:10.1088/1674-4926/32/5/054001
SPICE compatible analytical electron mobility model for biaxial strained-SiMOSFETs
SPICE compatible analytical electron mobility model for biaxial strained-SiMOSFETs
Amit Chaudhry 1J. N. Roy 1S. Sangwan1
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mobility/SiGe/strained-Si/phonon/surface roughness/columbicKey words
mobility/SiGe/strained-Si/phonon/surface roughness/columbic引用本文复制引用
Amit Chaudhry,J. N. Roy,S. Sangwan..SPICE compatible analytical electron mobility model for biaxial strained-SiMOSFETs[J].半导体学报,2011,32(5):36-41,6.
