电源技术2011，Vol.35Issue(6)：711-713,3.
一种适用于低功耗LDO的CMOS电流基准设计
Design of a CMOS current reference for low power LDO
诸葛坚 1陈迪平 1陈弈星2
作者信息
- 1. 湖南大学物理与微电子科学学院,湖南长沙,410082
- 2. 长沙麓湖微电子技术有限公司,湖南长沙,410013
- 折叠
摘要
Abstract
A novel CMOS current reference for low power LDO was presented in this paper. ln such a circuit, the different characteristics of MOS transistor in saturation and sub-threshold region were used to do the temperature compensation. The circuit adopted CMOS structure with the advantages of simple structure, better temperature coefficient and smaller area of layout. The circuit was simulated in CSMC 0.5 μm model. The quiescent current of the circuit was 400 nA. When the temperature change was within-20-110 ℃, the current of the circuit only changed 3.17 nA with second-order temperature compensation.关键词
电流基准/LDO/低功耗/高精度/二阶温度补偿Key words
current reference/ LDO/ low power/ high precision/ second-order temperature compensation分类
信息技术与安全科学引用本文复制引用
诸葛坚,陈迪平,陈弈星..一种适用于低功耗LDO的CMOS电流基准设计[J].电源技术,2011,35(6):711-713,3.
