红外技术2011，Vol.33Issue(6)：328-331,344,5.
光导型碲镉汞红外器件的曲面延伸电极工艺评价
The Evaluation of Curved Extended-electrode of HgCdTe IR Photoconductive Detector
摘要
Abstract
HgCdTe IR photoconductive detector with curved extended-electrode has been fabricated, and the ability to prevent the electrode from breaking in the liquid nitrogen was studied.The electrode was normal and there were no evident changes of the resistance of the devices when the devices were taken from normal temperature into nitrogen temperature for 9 times.Nevertheless, topography of the extended electrodes imaged by SEM showed that there were some holes in the sidewall of the step of the extended electrode film.It is indicated that the resistance characterization is not sensitive to the microdefects, the characterization of the electrode stability needs to be performed in conjunction with micro morphology characterization, and the SEM is a efficient means to evaluate the stability of electrode.关键词
曲面延伸电极/光导型碲镉汞红外探测器/电阻表征/扫描电子显微镜/微观形貌Key words
curved extended-electrode/ HgCdTe IR photoconductor/ resistance characterization/ SEM/Micro topography characterization分类
信息技术与安全科学引用本文复制引用
钱大憨,贾嘉,陈昱,王韡,汤亦聃,朱龙源,李向阳..光导型碲镉汞红外器件的曲面延伸电极工艺评价[J].红外技术,2011,33(6):328-331,344,5.基金项目
国家自然科学基金项目,编号:60907048 （）
上海市自然科学基金项目,编号:09ZR1436200. （）
