红外技术2011，Vol.33Issue(6)：332-335,4.
NEA GaN光电阴极的制备与评估
Preparation and Evaluation of NEA GaN Photocathode
摘要
Abstract
The structural properties of GaN are introduced in this paper, and the preparation method of NEA GaN photocathode is studied. 150 nm thick GaN samples with p-type doping concentration of 1.6 × 1017cm-3 are grown by MOCVD. After the GaN surface cleaning the atomic clean surface was get, and the GaN photocathode was activated by Cs/O in the ultra-high vacuum system, then the NEA GaN photocathode was obtained. After the successful activation, NEA GaN photocathode was tested by Multi-information test system prepared by our laboratory. The results shows that the reflection-mode QE of the NEA GaN photocathode reaches 30％, and the transmission-mode QE reaches 12％.关键词
GaN光电阴极/NEA/制备工艺Key words
GaN photocathode, NEA, Preparation technology分类
信息技术与安全科学引用本文复制引用
高频,王晓晖,杜玉杰,李彪,付晓倩..NEA GaN光电阴极的制备与评估[J].红外技术,2011,33(6):332-335,4.基金项目
国家自然科学基金项目,编号:60871012. （）
