人工晶体学报2011，Vol.40Issue(3)：543-547,551,6.
垂直Bridgman法生长Cd1-XMnxTe晶体的缺陷研究
Study on Defects in Cd1-xMnxTe Crystals Grown by Vertical Bridgman Method
摘要
Abstract
Cd1-xMnxTe single crystal with the dimensions of Φ30 mm × 130 mm were grown by vertical Bridgman method. The structural defects of dislocations, Te inclusions and twins in the as-grown crystal were effectively revealed by the Nakagawa etchant, and the relation between IR transmitance and defect was investigated by the Fourier-transform infrared (FF-IR) spectra. The results indicated that the etch pits density in the crystal was of 104-105 cm-2 and the Te inclusion density of 103-104 cm-2. The twins observed in the as-grown ingot were mainly coherent ones, which lay on the { 111 } face and ran parallel to the growth axis of the ingot. The IR transmittance of the as-grown wafers under the incident IR wavenumber range of 4000-500 cm-1 was in the range of 36.7％-55.3％. Crystals with higher IR transmittance reflect lower dislocation density and lower Te inclusion density. It is found that the lattice absorption and free carrier absorption to the IR from 4000-500 cm -1 are the main absorption mechanics involved in the FT-IR spectra in Cd1-xMnxTe crystals.关键词
Cd1-xMnxTe/位错/Te夹杂相/孪晶/红外透过率Key words
Cd1-xMnxTe/ dislocation/ Te inclusion/ twin/ IR transmittance分类
通用工业技术引用本文复制引用
施凌云,张继军,王林军,黄健,唐可,彭兰..垂直Bridgman法生长Cd1-XMnxTe晶体的缺陷研究[J].人工晶体学报,2011,40(3):543-547,551,6.基金项目
国家自然科学基金(No.50902091) （No.50902091）
上海市博士后科研资助计划(09R21413000) （09R21413000）
