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Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film

Chi Yaqing Zhong Haiqin Zhang Xueao Fang Liang Chang Shengli

半导体学报2009,Vol.30Issue(12):1-4,4.
半导体学报2009,Vol.30Issue(12):1-4,4.DOI:10.1088/1674-4926/30/12/122001

Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film

Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film

Chi Yaqing 1Zhong Haiqin 1Zhang Xueao 2Fang Liang 1Chang Shengli2

作者信息

  • 1. School of Computer, National University of Defense Technology, Changsha 410073, China
  • 2. School of Science, National University of Defense Technology, Changsha 410073, China
  • 折叠

摘要

Abstract

Periodic disposed quantum dot arrays are very useful for the large scale integration of single electron devices. Gold quantum dot arrays were self-assembled inside pore channels of ordered amino-functionalized mesoporous silica thin films, employing the neutralization reaction between chloroauric acid and amino groups. The diameters of quantum dots are controlled via changing the aperture of pore channels from 2.3 to 8.3 nm, which are characterized by HRTEM, SEM and FT-IR. UV-vis absorption spectra of gold nanoparticle/mesoporous silica composite thin films exhibit a blue shift and intensity drop of the absorption peak as the aperture of mesopores decreases,which represents the energy level change of quantum dot arrays due to the quantum size effect.

关键词

gold quantum dot array/ mesoporous silica/ quantum size effect/ single electron device

Key words

gold quantum dot array/ mesoporous silica/ quantum size effect/ single electron device

分类

信息技术与安全科学

引用本文复制引用

Chi Yaqing,Zhong Haiqin,Zhang Xueao,Fang Liang,Chang Shengli..Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film[J].半导体学报,2009,30(12):1-4,4.

基金项目

Project supported by the National High Technology Research and Development Program of China (No. 2009AA01Z114), the Advanced Research Foundation of National University of Defense Technology (No. JC08-02-08), and the Innovation Program of National University of Defense Technology for Excellent Postgraduate. (No. 2009AA01Z114)

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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