半导体学报2009，Vol.30Issue(12)：25-29,5.DOI:10.1088/1674-4926/30/12/124003
Improvements to the extraction of an AlGaN/GaN HEMT small-signal model
Improvements to the extraction of an AlGaN/GaN HEMT small-signal model
摘要
Abstract
The accurate extraction of A1GaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract R_g. In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S_(11) and S_(22) is improved, and f_T and f_(max) can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz.关键词
AlGaN/GaN HEMT/ small-signal model/ Schottky resistor/ drain delayKey words
AlGaN/GaN HEMT/ small-signal model/ Schottky resistor/ drain delay分类
电子信息工程引用本文复制引用
Pu Yan,Pang Lei,Wang Liang,Chen Xiaojuan,Li Chengzhan,Liu Xinyu..Improvements to the extraction of an AlGaN/GaN HEMT small-signal model[J].半导体学报,2009,30(12):25-29,5.基金项目
Project supported by the National Basic Research Program of China (No. 2002CB311903) and the Key Program of the Chinese Academy of Sciences (No. KGCX2-SW- 107). （No. 2002CB311903）
