半导体学报2009，Vol.30Issue(12)：37-41,5.DOI:10.1088/1674-4926/30/12/124006
A symbolically defined InP double heterojunction bipolar transistor large-signal model
A symbolically defined InP double heterojunction bipolar transistor large-signal model
Cao Yuxiong 1Jin Zhi 1Ge Ji 1Su Yongbo 1Liu Xinyu1
作者信息
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- 折叠
摘要
Abstract
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD)in Agilent ADS. The model accounts for most physical phenomena incluaing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.关键词
InP DHBT/ large-signal model/ SDDKey words
InP DHBT/ large-signal model/ SDD分类
信息技术与安全科学引用本文复制引用
Cao Yuxiong,Jin Zhi,Ge Ji,Su Yongbo,Liu Xinyu..A symbolically defined InP double heterojunction bipolar transistor large-signal model[J].半导体学报,2009,30(12):37-41,5.
