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Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

Zhao Lixin Jin Zhi Liu Xinyu

半导体学报2009,Vol.30Issue(12):50-57,8.
半导体学报2009,Vol.30Issue(12):50-57,8.DOI:10.1088/1674-4926/30/12/124008

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

Zhao Lixin 1Jin Zhi 1Liu Xinyu1

作者信息

  • 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 折叠

摘要

Abstract

In wireless mobile communications and wireless local area networks (WLAN), advanced lnGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.

关键词

large signal dynamic characteristics/ InGaP HBT/ waveform distortion

Key words

large signal dynamic characteristics/ InGaP HBT/ waveform distortion

分类

信息技术与安全科学

引用本文复制引用

Zhao Lixin,Jin Zhi,Liu Xinyu..Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers[J].半导体学报,2009,30(12):50-57,8.

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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