半导体学报2009，Vol.30Issue(12)：58-63,6.DOI:10.1088/1674-4926/30/12/125001
A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure
A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure
摘要
Abstract
A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.关键词
quasi-3D/ 3D/ device simulation/ high-voltage level-shiftingKey words
quasi-3D/ 3D/ device simulation/ high-voltage level-shifting分类
信息技术与安全科学引用本文复制引用
Liu Jizhi,Chen Xingbi..A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure[J].半导体学报,2009,30(12):58-63,6.基金项目
Project supported by the National Natural Science Foundation of China (No. 50777005) and the Young Foundation of University of Electronic Science and Technology of China (No. JX0832). （No. 50777005）
