半导体学报2009，Vol.30Issue(12)：108-112,5.DOI:10.1088/1674-4926/30/12/125009
A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs
摘要
Abstract
A radiation-hardened-by-design (RHBD) technique for phase-locked loops (PLLs) has been developed for single-event transient (SET) mitigation. By presenting a novel SET-resistant complementary current limiter (CCL) and implementing it between the charge pump (CP) and the loop filter (LPF), the PLL's single-event suscepti-bility is significantly decreased in the presence of SETs in CPs, whereas it has little impact on the loop parameters in the absence of SETs in CPs. Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator (VCO) by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%. Moreover, the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift, as well as a single-event strike.关键词
charge pump/ phase-locked loop/ RHBD/ single-event transientKey words
charge pump/ phase-locked loop/ RHBD/ single-event transient分类
信息技术与安全科学引用本文复制引用
Zhao Zhenyu,Zhang Minxuan,Chen Shuming,Chen Jihua,Li Junfeng..A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs[J].半导体学报,2009,30(12):108-112,5.基金项目
Project supported by the National Natural Science Foundation of China (Nos. 60836004, 60676010), the PhD Program of Ministry of Education of China (No. 20079998015), and the Program for Changjiang Scholars and Innovative Research Team in University of China. （Nos. 60836004, 60676010）
