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Properties of the ITO layer in a novel red light-emitting diode

Zhang Yonghui Guo Weiling Gao Wei Li Chunwei Ding Tianping

半导体学报2010，Vol.31Issue(4)：9-13,5.

半导体学报2010，Vol.31Issue(4)：9-13,5.DOI:10.1088/1674-4926/31/4/043002

Properties of the ITO layer in a novel red light-emitting diode

Zhang Yonghui ¹Guo Weiling ¹Gao Wei ¹Li Chunwei ¹Ding Tianping¹

作者信息

1. Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
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摘要

关键词

indium tin oxide/GaP/contact resistance/reliability

Key words

indium tin oxide/GaP/contact resistance/reliability

引用本文复制引用

Zhang Yonghui,Guo Weiling,Gao Wei,Li Chunwei,Ding Tianping..Properties of the ITO layer in a novel red light-emitting diode[J].半导体学报,2010,31(4):9-13,5.

基金项目

Project supported by the National High Technology Research and Development Program of China (Nos. 2008AA03Z402, SQ200703Z431230), the Beijing National Science Foundation of China (No. 4092007), and the Talent Promoting Education of Beijing, China (No. 05002015200504). （Nos. 2008AA03Z402, SQ200703Z431230）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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