半导体学报2010，Vol.31Issue(4)：20-24,5.DOI:10.1088/1674-4926/31/4/044002
Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor
Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor
Zhang Yong 1Yang Jianhong 1Cai Xueyuan 1Wang Zaixing2
作者信息
- 1. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
- 2. School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
- 折叠
摘要
关键词
SIT/OSIT/potential barrier height/normalized approach/I-V characteristicsKey words
SIT/OSIT/potential barrier height/normalized approach/I-V characteristics引用本文复制引用
Zhang Yong,Yang Jianhong,Cai Xueyuan,Wang Zaixing..Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor[J].半导体学报,2010,31(4):20-24,5.
