AlGaN/GaN double-channel HEMT

Quan Si Hao Yue Ma Xiaohua Zheng Pengtian Xie Yuanbin

半导体学报2010，Vol.31Issue(4)：25-27,3.

半导体学报2010，Vol.31Issue(4)：25-27,3.DOI:10.1088/1674-4926/31/4/044003

Quan Si ¹Hao Yue ¹Ma Xiaohua ¹Zheng Pengtian ¹Xie Yuanbin¹

作者信息

high-electron mobility transistor/AlGaN/GaN/AlGaN/GaN/double-channel

high-electron mobility transistor/AlGaN/GaN/AlGaN/GaN/double-channel

Quan Si,Hao Yue,Ma Xiaohua,Zheng Pengtian,Xie Yuanbin..AlGaN/GaN double-channel HEMT[J].半导体学报,2010,31(4):25-27,3.

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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