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EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy

Xi Xiaowen Chai Changchun Ren Xingrong Yang Yintang Zhang Bing Hong Xiao

半导体学报2010，Vol.31Issue(4)：32-36,5.

半导体学报2010，Vol.31Issue(4)：32-36,5.DOI:10.1088/1674-4926/31/4/044005

EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy

Xi Xiaowen ¹Chai Changchun ¹Ren Xingrong ¹Yang Yintang ¹Zhang Bing ¹Hong Xiao¹

作者信息

1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi 'an 710071, China
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摘要

关键词

BJT/square-wave EMP/injecting voltage/damage energy

Key words

BJT/square-wave EMP/injecting voltage/damage energy

引用本文复制引用

Xi Xiaowen,Chai Changchun,Ren Xingrong,Yang Yintang,Zhang Bing,Hong Xiao..EMP injection damage effects of a bipolar transistor and its relationship between the injecting voltage and energy[J].半导体学报,2010,31(4):32-36,5.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60776034). （No. 60776034）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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